TK20A60W,S5VX

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-220SIS

Fall Time (Typ) :

6 ns

Number of Channels :

1

Packaging :

Tube

Continuous Drain Current (ID) :

20A

Vgs(th) (Max) @ Id :

3.7V @ 1mA

Mounting Type :

Through Hole

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Rise Time :

25ns

Package / Case :

TO-220-3 Full Pack

Turn On Delay Time :

50 ns

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

RoHS Compliant

Published :

2014

Rds On Max :

155 mΩ

Operating Temperature :

150°C TJ

Input Capacitance :

1.68nF

Drain to Source Resistance :

130mOhm

Weight :

6.000006g

Max Operating Temperature :

150°C

Mount :

Through Hole

Power Dissipation-Max :

45W Tc

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

155mOhm @ 10A, 10V

Factory Lead Time :

16 Weeks

Vgs (Max) :

±30V

Turn-Off Delay Time :

100 ns

Radiation Hardening :

No

FET Type :

N-Channel

Series :

DTMOSIV

Drain to Source Voltage (Vdss) :

600V

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 300V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C