TK20E60W,S1VX

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

16 Weeks

Vgs (Max) :

±30V

Package / Case :

TO-220-3

Weight :

6.000006g

Turn-Off Delay Time :

100 ns

Rds On (Max) @ Id, Vgs :

155m Ω @ 10A, 10V

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 300V

Power Dissipation-Max :

165W Tc

Radiation Hardening :

No

Packaging :

Tube

Series :

DTMOSIV

Mount :

Through Hole

Vgs(th) (Max) @ Id :

3.7V @ 1mA

Turn On Delay Time :

50 ns

Continuous Drain Current (ID) :

20A

Drain to Source Voltage (Vdss) :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1

Number of Pins :

3

FET Type :

N-Channel

Fall Time (Typ) :

6 ns

Rise Time :

25ns

Element Configuration :

Single

Operating Temperature :

150°C TJ

Published :

2013

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V