TK20G60W,RVQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

155m Ω @ 10A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

3.7V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 300V

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

FET Type :

N-Channel

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

600V

Number of Channels :

1

Radiation Hardening :

No

Mount :

Surface Mount

Fall Time (Typ) :

6 ns

Continuous Drain Current (ID) :

20A

Factory Lead Time :

16 Weeks

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Operating Temperature :

150°C TJ

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

100 ns

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Weight :

3.949996g

FET Feature :

Super Junction

Power Dissipation-Max :

165W Tc

Turn On Delay Time :

50 ns

Published :

2013

Gate to Source Voltage (Vgs) :

30V

Rise Time :

25ns

Mounting Type :

Surface Mount

Vgs (Max) :

±30V

Series :

DTMOSIV