TK20A60W5,S5VX

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

175mOhm @ 10A, 10V

Number of Channels :

1

Operating Temperature :

150°C TJ

Number of Pins :

3

Weight :

6.000006g

Element Configuration :

Single

Max Operating Temperature :

150°C

Mounting Type :

Through Hole

Input Capacitance :

1.8nF

Min Operating Temperature :

-55°C

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Rds On Max :

175 mΩ

Radiation Hardening :

No

Rise Time :

45ns

Factory Lead Time :

12 Weeks

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

600V

Drain to Source Resistance :

150mOhm

Turn On Delay Time :

90 ns

Fall Time (Typ) :

6 ns

Supplier Device Package :

TO-220SIS

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 300V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Published :

2001

Drain to Source Breakdown Voltage :

600V

Series :

DTMOSIV

Continuous Drain Current (ID) :

20A

Gate to Source Voltage (Vgs) :

30V

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Turn-Off Delay Time :

100 ns

Power Dissipation-Max :

45W Tc

FET Type :

N-Channel

Package / Case :

TO-220-3 Full Pack