TK16V60W,LVQ

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Mfr.Part #
TK16V60W,LVQ
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
4-VSFN Exposed Pad
Datasheet
Download
Description
MOSFET N-CH 600V 15.8A 4DFN
Stock
11,291
In Stock :
11,291

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
1350pF @ 300V
Drain to Source Voltage (Vdss) :
600V
Power Dissipation-Max :
139W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
DTMOSIV
Fall Time (Typ) :
5 ns
Packaging :
Tape and Reel (TR)
FET Feature :
Super Junction
Continuous Drain Current (ID) :
15.8A
Number of Channels :
1
Rds On (Max) @ Id, Vgs :
190m Ω @ 7.9A, 10V
Vgs (Max) :
±30V
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
RoHS Status :
RoHS Compliant
Number of Pins :
5
Published :
2014
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
3.7V @ 790μA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package / Case :
4-VSFN Exposed Pad
Mounting Type :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
15.8A Ta
Operating Temperature :
150°C TJ
Rise Time :
25ns
Turn On Delay Time :
50 ns
Mount :
Surface Mount
Turn-Off Delay Time :
100 ns
Radiation Hardening :
No
Gate to Source Voltage (Vgs) :
30V
Datasheets
TK16V60W,LVQ
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK16V60W,LVQ from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Number of Pins:5, Package / Case:4-VSFN Exposed Pad, Mounting Type:Surface Mount, Operating Temperature:150°C TJ, TK16V60W,LVQ pinout, TK16V60W,LVQ datasheet PDF, TK16V60W,LVQ amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK16V60W,LVQ ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK16V60W,LVQ


N-Channel Tape & Reel (TR) 190m Ω @ 7.9A, 10V ±30V 1350pF @ 300V 38nC @ 10V 600V 4-VSFN Exposed Pad

TK16V60W,LVQ Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1350pF @ 300V.This device has a continuous drain current (ID) of [15.8A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 100 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 50 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

TK16V60W,LVQ Features


a continuous drain current (ID) of 15.8A
the turn-off delay time is 100 ns
a 600V drain to source voltage (Vdss)


TK16V60W,LVQ Applications


There are a lot of Toshiba Semiconductor and Storage
TK16V60W,LVQ applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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