TK16V60W,LVQ
- Mfr.Part #
- TK16V60W,LVQ
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- 4-VSFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 15.8A 4DFN
- Stock
- 11,291
- In Stock :
- 11,291
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1350pF @ 300V
- Drain to Source Voltage (Vdss) :
- 600V
- Power Dissipation-Max :
- 139W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- DTMOSIV
- Fall Time (Typ) :
- 5 ns
- Packaging :
- Tape and Reel (TR)
- FET Feature :
- Super Junction
- Continuous Drain Current (ID) :
- 15.8A
- Number of Channels :
- 1
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 7.9A, 10V
- Vgs (Max) :
- ±30V
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 5
- Published :
- 2014
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 3.7V @ 790μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- 4-VSFN Exposed Pad
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 15.8A Ta
- Operating Temperature :
- 150°C TJ
- Rise Time :
- 25ns
- Turn On Delay Time :
- 50 ns
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 100 ns
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 30V
- Datasheets
- TK16V60W,LVQ

N-Channel Tape & Reel (TR) 190m Ω @ 7.9A, 10V ±30V 1350pF @ 300V 38nC @ 10V 600V 4-VSFN Exposed Pad
TK16V60W,LVQ Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1350pF @ 300V.This device has a continuous drain current (ID) of [15.8A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 100 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 50 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
TK16V60W,LVQ Features
a continuous drain current (ID) of 15.8A
the turn-off delay time is 100 ns
a 600V drain to source voltage (Vdss)
TK16V60W,LVQ Applications
There are a lot of Toshiba Semiconductor and Storage
TK16V60W,LVQ applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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