TK16A60W5,S4VX

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Mfr.Part #
TK16A60W5,S4VX
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 600V 15.8A TO220SIS
Stock
30
In Stock :
30

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Breakdown Voltage :
600V
Power Dissipation :
40W
RoHS Status :
RoHS Compliant
Continuous Drain Current (ID) :
15.8A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
40W Tc
Capacitance :
1.35nF
Series :
DTMOSIV
Input Capacitance (Ciss) (Max) @ Vds :
1350pF @ 300V
Mount :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
15.8A Ta
Package / Case :
TO-220-3 Full Pack
Operating Temperature :
150°C TJ
Mounting Type :
Through Hole
FET Feature :
Super Junction
Published :
2013
Gate Charge (Qg) (Max) @ Vgs :
43nC @ 10V
Vgs(th) (Max) @ Id :
3.7V @ 1.5mA
Vgs (Max) :
±30V
Element Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Factory Lead Time :
16 Weeks
Rds On (Max) @ Id, Vgs :
190m Ω @ 7.9A, 10V
Packaging :
Tube
Datasheets
TK16A60W5,S4VX
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK16A60W5,S4VX from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3 Full Pack, Operating Temperature:150°C TJ, Mounting Type:Through Hole, TK16A60W5,S4VX pinout, TK16A60W5,S4VX datasheet PDF, TK16A60W5,S4VX amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK16A60W5,S4VX ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK16A60W5,S4VX


N-Channel Tube 190m Ω @ 7.9A, 10V ±30V 1350pF @ 300V 43nC @ 10V TO-220-3 Full Pack

TK16A60W5,S4VX Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1350pF @ 300V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.In addition to reducing power consumption, this device uses drive voltage (10V).

TK16A60W5,S4VX Features


a continuous drain current (ID) of 15.8A
a drain-to-source breakdown voltage of 600V voltage


TK16A60W5,S4VX Applications


There are a lot of Toshiba Semiconductor and Storage
TK16A60W5,S4VX applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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