TK160F10N1L,LQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

480A

Input Capacitance (Ciss) (Max) @ Vds :

10100pF @ 10V

Power Dissipation-Max :

375W Tc

RoHS Status :

RoHS Compliant

DS Breakdown Voltage-Min :

100V

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Factory Lead Time :

24 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape and Reel (TR)

Operating Temperature :

175°C

Terminal Form :

Gull wing

Number of Elements :

1

Drain to Source Voltage (Vdss) :

100V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0037Ohm

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 80A, 10V

Surface Mount :

yes

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

466 mJ

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

122nC @ 10V

Reference Standard :

AEC-Q101

Mounting Type :

Surface Mount

Terminal Position :

Single

Series :

U-MOSVIII-H

Current - Continuous Drain (Id) @ 25°C :

160A Ta

Drain Current-Max (Abs) (ID) :

160A