TK16G60W,RVQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

15.8A Ta

Factory Lead Time :

12 Weeks

Vgs(th) (Max) @ Id :

3.7V @ 790μA

Mounting Type :

Surface Mount

Input Capacitance :

1.35nF

Published :

2013

Packaging :

Cut Tape (CT)

Fall Time (Typ) :

5 ns

Rise Time :

25ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 300V

Series :

DTMOSIV

Supplier Device Package :

D2PAK

Rds On Max :

190 mΩ

Operating Temperature :

150°C TJ

Element Configuration :

Single

FET Type :

N-Channel

Drain to Source Resistance :

190mOhm

Drain to Source Voltage (Vdss) :

600V

FET Feature :

Super Junction

Max Operating Temperature :

150°C

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Mount :

Surface Mount

Power Dissipation-Max :

130W Tc

Continuous Drain Current (ID) :

15.8A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Min Operating Temperature :

-55°C

Turn-Off Delay Time :

100 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

190mOhm @ 7.9A, 10V