TK16E60W,S1VX
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- Mfr.Part #
- TK16E60W,S1VX
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 15.8A TO220
- Stock
- 489
- In Stock ：
- 489
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- DTMOSIV
- Vgs (Max) :
- ±30V
- Package / Case :
- TO-220-3
- FET Type :
- N-Channel
- Power Dissipation :
- 130W
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 1350pF @ 300V
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 600V
- RoHS Status :
- RoHS Compliant
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 7.9A, 10V
- Vgs(th) (Max) @ Id :
- 3.7V @ 790μA
- Turn-Off Delay Time :
- 100 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 15.8A Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Fall Time (Typ) :
- 5 ns
- Factory Lead Time :
- 16 Weeks
- Element Configuration :
- Single
- Rise Time :
- 25ns
- Gate to Source Voltage (Vgs) :
- 30V
- Continuous Drain Current (ID) :
- 15.8A
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- FET Feature :
- Super Junction
- Power Dissipation-Max :
- 130W Tc
- Published :
- 2013
- Datasheets
- TK16E60W,S1VX
N-Channel Tube 190m Ω @ 7.9A, 10V ±30V 1350pF @ 300V 38nC @ 10V TO-220-3
TK16E60W,S1VX Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1350pF @ 300V.This device conducts a continuous drain current (ID) of 15.8A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 100 ns occurs as the input capacitance charges before drain current conduction commences.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
TK16E60W,S1VX Features
a continuous drain current (ID) of 15.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 100 ns
TK16E60W,S1VX Applications
There are a lot of Toshiba Semiconductor and Storage
TK16E60W,S1VX applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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