TK16C60W,S1VQ
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- Mfr.Part #
- TK16C60W,S1VQ
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 15.8A I2PAK
- Stock
- 21,041
- In Stock ：
- 21,041
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 7.9A, 10V
- Power Dissipation-Max :
- 130W Tc
- Vgs(th) (Max) @ Id :
- 3.7V @ 790μA
- Continuous Drain Current (ID) :
- 15.8A
- Gate to Source Voltage (Vgs) :
- 30V
- Factory Lead Time :
- 16 Weeks
- Radiation Hardening :
- No
- RoHS Status :
- RoHS Compliant
- Weight :
- 2.387001g
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 15.8A Ta
- FET Type :
- N-Channel
- Packaging :
- Tube
- Number of Channels :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 1350pF @ 300V
- Published :
- 2015
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±30V
- Series :
- DTMOSIV
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 25ns
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 100 ns
- Drain to Source Breakdown Voltage :
- 600V
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Mount :
- Through Hole
- Fall Time (Typ) :
- 5 ns
- Turn On Delay Time :
- 50 ns
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- TK16C60W,S1VQ
N-Channel Tube 190m Ω @ 7.9A, 10V ±30V 1350pF @ 300V 38nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
TK16C60W,S1VQ Overview
The maximum input capacitance of this device is 1350pF @ 300V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 15.8A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 100 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 50 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
TK16C60W,S1VQ Features
a continuous drain current (ID) of 15.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 100 ns
TK16C60W,S1VQ Applications
There are a lot of Toshiba Semiconductor and Storage
TK16C60W,S1VQ applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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