TK16A55D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

330mOhm @ 8A, 10V

Max Operating Temperature :

150°C

Mounting Type :

Through Hole

Factory Lead Time :

16 Weeks

Operating Temperature :

150°C TJ

Mount :

Through Hole

Max Power Dissipation :

50W

Series :

π-MOSVII

Package / Case :

TO-220-3 Full Pack

Continuous Drain Current (ID) :

16A

Min Operating Temperature :

-55°C

Rds On Max :

330 mΩ

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Number of Pins :

3

Input Capacitance :

2.6nF

Current - Continuous Drain (Id) @ 25°C :

16A Ta

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 25V

Drain to Source Voltage (Vdss) :

550V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Fall Time (Typ) :

25 ns

Published :

2009

Rise Time :

50ns

Supplier Device Package :

TO-220SIS

Vgs(th) (Max) @ Id :

4V @ 1mA