TK16J60W,S1VQ
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- Mfr.Part #
- TK16J60W,S1VQ
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 15.8A TO3P
- Stock
- 9,149
- In Stock ：
- 9,149
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 25ns
- Power Dissipation-Max :
- 130W Tc
- FET Feature :
- Super Junction
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 30V
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Series :
- DTMOSIV
- Current - Continuous Drain (Id) @ 25°C :
- 15.8A Ta
- Fall Time (Typ) :
- 5 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1350pF @ 300V
- Vgs(th) (Max) @ Id :
- 3.7V @ 790μA
- Published :
- 2013
- Continuous Drain Current (ID) :
- 15.8A
- Drain to Source Breakdown Voltage :
- 600V
- Packaging :
- Tube
- Factory Lead Time :
- 16 Weeks
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Vgs (Max) :
- ±30V
- Turn-Off Delay Time :
- 100 ns
- Power Dissipation :
- 130W
- Capacitance :
- 1.35nF
- Mount :
- Through Hole
- Package / Case :
- TO-3P-3, SC-65-3
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 7.9A, 10V
- RoHS Status :
- RoHS Compliant
- Datasheets
- TK16J60W,S1VQ
N-Channel Tube 190m Ω @ 7.9A, 10V ±30V 1350pF @ 300V 38nC @ 10V TO-3P-3, SC-65-3
TK16J60W,S1VQ Overview
A device's maximal input capacitance is 1350pF @ 300V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 15.8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This device reduces its overall power consumption by using drive voltage (10V).
TK16J60W,S1VQ Features
a continuous drain current (ID) of 15.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 100 ns
TK16J60W,S1VQ Applications
There are a lot of Toshiba Semiconductor and Storage
TK16J60W,S1VQ applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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