TK16N60W,S1VF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

DTMOSIV

Operating Temperature :

150°C TJ

FET Feature :

Super Junction

Mount :

Through Hole

Drain to Source Resistance :

160mOhm

Current - Continuous Drain (Id) @ 25°C :

15.8A Ta

Element Configuration :

Single

Max Operating Temperature :

150°C

Capacitance :

1.35nF

Rise Time :

25ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Supplier Device Package :

TO-247

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

100 ns

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

190mOhm @ 7.9A, 10V

RoHS Status :

RoHS Compliant

Factory Lead Time :

16 Weeks

Package / Case :

TO-247-3

Mounting Type :

Through Hole

Min Operating Temperature :

-55°C

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 300V

Fall Time (Typ) :

5 ns

Published :

2013

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Resistance :

190mOhm

Rds On Max :

190 mΩ

Input Capacitance :

1.35nF

Drain to Source Voltage (Vdss) :

600V

Continuous Drain Current (ID) :

15.8A

Vgs(th) (Max) @ Id :

3.7V @ 790μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

130W Tc