SUP65P04-15-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

75 ns

Continuous Drain Current (ID) :

-65A

Fall Time (Typ) :

140 ns

Turn On Delay Time :

15 ns

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Published :

2011

Lead Free :

Lead Free

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pbfree Code :

yes

Number of Pins :

3

Nominal Vgs :

-3 V

Number of Terminations :

3

Mount :

Through Hole

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Power Dissipation-Max :

3.75W Ta 120W Tc

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Rise Time :

380ns

Series :

TrenchFET®

Mounting Type :

Through Hole

Radiation Hardening :

No

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

5400pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Pin Count :

3

Transistor Element Material :

SILICON

Threshold Voltage :

-3V

Package / Case :

TO-220-3

Power Dissipation :

3.75W

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Pulsed Drain Current-Max (IDM) :

240A

FET Type :

P-Channel

Drain to Source Breakdown Voltage :

40V

Rds On (Max) @ Id, Vgs :

15m Ω @ 30A, 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V