SUP60N02-4M5P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

4.5mOhm @ 20A, 10V

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

3.75W Ta 120W Tc

Input Capacitance :

5.95nF

Fall Time (Typ) :

8 ns

Vgs (Max) :

±20V

Rise Time :

7ns

Packaging :

Tape and Reel (TR)

Supplier Device Package :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Width :

4.7mm

Weight :

6.000006g

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Number of Channels :

1

Turn On Delay Time :

15 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 250µA

Rds On Max :

4.5 mΩ

Published :

2011

Drain to Source Resistance :

4.5mOhm

Min Operating Temperature :

-55°C

Element Configuration :

Single

Max Operating Temperature :

175°C

Continuous Drain Current (ID) :

60A

Height :

9.01mm

Length :

10.41mm

Turn-Off Delay Time :

35 ns

Input Capacitance (Ciss) (Max) @ Vds :

5950pF @ 10V

Drain to Source Voltage (Vdss) :

20V

Gate to Source Voltage (Vgs) :

20V

Series :

TrenchFET®

Radiation Hardening :

No

Package / Case :

TO-220-3

Drain to Source Breakdown Voltage :

20V

Number of Pins :

3

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole