SUP60030E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

80V

FET Type :

N-Channel

Factory Lead Time :

14 Weeks

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0034Ohm

Drive Voltage (Max Rds On,Min Rds On) :

7.5V 10V

Continuous Drain Current (ID) :

120A

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

TrenchFET®

Power Dissipation-Max :

375W Tc

Avalanche Energy Rating (Eas) :

245 mJ

Mount :

Through Hole

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

250A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-220AB

Packaging :

Bulk

Drain to Source Voltage (Vdss) :

80V

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Package / Case :

TO-220-3

Published :

2016

Gate Charge (Qg) (Max) @ Vgs :

141nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 30A, 10V

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Input Capacitance (Ciss) (Max) @ Vds :

7910pF @ 40V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED