SUP60N06-12P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Rise Time :

11ns

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

12m Ω @ 30A, 10V

Fall Time (Typ) :

8 ns

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Published :

2011

Weight :

6.000006g

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

ECCN Code :

EAR99

Package / Case :

TO-220-3

Turn-Off Delay Time :

16 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Height :

9.01mm

Series :

TrenchFET®

Power Dissipation :

3.25W

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Number of Elements :

1

Turn On Delay Time :

11 ns

Pin Count :

3

Radiation Hardening :

No

Number of Terminations :

3

Mount :

Through Hole

Power Dissipation-Max :

3.25W Ta 100W Tc

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Avalanche Energy Rating (Eas) :

80 mJ

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

1970pF @ 30V

Number of Pins :

3

Transistor Application :

SWITCHING

Width :

4.7mm

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

60V

Case Connection :

DRAIN

Length :

10.41mm

DS Breakdown Voltage-Min :

60V

Pulsed Drain Current-Max (IDM) :

80A

Number of Channels :

1

Continuous Drain Current (ID) :

60A