SUP60N10-16L-E3
- Mfr.Part #
- SUP60N10-16L-E3
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 60A TO220AB
- Stock
- 17,886
- In Stock :
- 17,886
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 90ns
- Operating Temperature :
- -55°C~175°C TJ
- Number of Channels :
- 1
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 130 ns
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 3820pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Pins :
- 3
- Mount :
- Through Hole
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Width :
- 4.7mm
- Turn On Delay Time :
- 12 ns
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- JEDEC-95 Code :
- TO-220AB
- Length :
- 10.41mm
- Number of Elements :
- 1
- Power Dissipation-Max :
- 150W Tc
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 55 ns
- Weight :
- 6.000006g
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Package / Case :
- TO-220-3
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 30A, 10V
- Height :
- 9.01mm
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Resistance :
- 16mOhm
- Series :
- TrenchFET®
- Radiation Hardening :
- No
- Power Dissipation :
- 150W
- Published :
- 2009
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Voltage (Vdss) :
- 100V
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 60A
- Datasheets
- SUP60N10-16L-E3
N-Channel Tape & Reel (TR) 16m Ω @ 30A, 10V ±20V 3820pF @ 25V 110nC @ 10V 100V TO-220-3
SUP60N10-16L-E3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3820pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 60A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 55 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 12 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
SUP60N10-16L-E3 Features
a continuous drain current (ID) of 60A
the turn-off delay time is 55 ns
a 100V drain to source voltage (Vdss)
SUP60N10-16L-E3 Applications
There are a lot of Vishay Siliconix
SUP60N10-16L-E3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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