SUP60N10-18P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Radiation Hardening :

No

Threshold Voltage :

4.5V

Number of Pins :

3

REACH SVHC :

Unknown

Number of Elements :

1

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

3.75W Ta 150W Tc

Mounting Type :

Through Hole

Series :

TrenchFET®

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 50V

Nominal Vgs :

4.5 V

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Lead Free :

Lead Free

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

18.3m Ω @ 15A, 10V

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Package / Case :

TO-220-3

Published :

2011

Continuous Drain Current (ID) :

60A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

12 ns

Turn-Off Delay Time :

18 ns

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Rise Time :

10ns

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-220AB

Pin Count :

3

Resistance :

18.3mOhm

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

100V

Fall Time (Typ) :

8 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation :

3.75W

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V