SUP60N06-12P-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchFET®

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Fall Time (Typ) :

8 ns

FET Type :

N-Channel

Height :

9.01mm

Number of Pins :

3

Number of Elements :

1

Mount :

Through Hole

Number of Channels :

1

Pulsed Drain Current-Max (IDM) :

80A

Turn-Off Delay Time :

16 ns

Input Capacitance (Ciss) (Max) @ Vds :

1970pF @ 30V

Number of Terminations :

3

Case Connection :

DRAIN

Length :

10.41mm

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Continuous Drain Current (ID) :

60A

Resistance :

12mOhm

Mounting Type :

Through Hole

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Published :

2011

Turn On Delay Time :

11 ns

Rise Time :

11ns

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

80 mJ

Weight :

6.000006g

Power Dissipation-Max :

3.25W Ta 100W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

12m Ω @ 30A, 10V

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

60V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Power Dissipation :

3.25W

Drain to Source Voltage (Vdss) :

60V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4.5V @ 250μA

ECCN Code :

EAR99

Width :

4.7mm