STW5NK100Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Package / Case :

TO-247-3

Drain to Source Voltage (Vdss) :

1000V

JEDEC-95 Code :

TO-247AC

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Transistor Application :

SWITCHING

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Weight :

4.535924g

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1154pF @ 25V

Avalanche Energy Rating (Eas) :

250 mJ

Series :

SuperMESH3™

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Fall Time (Typ) :

19 ns

Base Part Number :

STW5N

JESD-609 Code :

e3

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

3.5A

Number of Elements :

1

Rise Time :

7.7ns

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 10V

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

3.7 Ω @ 1.75A, 10V

Length :

15.75mm

Height :

20.15mm

Lead Free :

Lead Free

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Turn-Off Delay Time :

51.5 ns

Width :

5.15mm

Current - Continuous Drain (Id) @ 25°C :

3.5A Tc

Threshold Voltage :

3.75V

Gate to Source Voltage (Vgs) :

30V

Element Configuration :

Single

Number of Terminations :

3

Voltage - Rated DC :

1kV

ECCN Code :

EAR99

Vgs (Max) :

±30V

Number of Pins :

3

Power Dissipation :

125W

Turn On Delay Time :

22.5 ns

Power Dissipation-Max :

125W Tc

Drain to Source Breakdown Voltage :

1kV

Resistance :

3.7Ohm

Current Rating :

3.5A

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)