STW55NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

600V

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Element Configuration :

Single

Series :

FDmesh™ II

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-247AC

Rise Time :

68ns

Mount :

Through Hole

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

5800pF @ 50V

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Pins :

3

Max Junction Temperature (Tj) :

150°C

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±25V

Rds On (Max) @ Id, Vgs :

60m Ω @ 25.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

51A Tc

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

850 mJ

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Power Dissipation-Max :

350W Tc

Package / Case :

TO-247-3

Radiation Hardening :

No

Mounting Type :

Through Hole

Power Dissipation :

350W

Gate to Source Voltage (Vgs) :

25V

Pin Count :

3

Number of Terminations :

3

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

204A

Turn-Off Delay Time :

188 ns

Base Part Number :

STW55N

JESD-609 Code :

e3

Continuous Drain Current (ID) :

51A

Height :

24.45mm

Length :

15.75mm

Fall Time (Typ) :

96 ns

Width :

5.15mm

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Threshold Voltage :

4V

REACH SVHC :

No SVHC

Number of Channels :

1

Turn On Delay Time :

33 ns

Resistance :

60mOhm