STW55NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Gate to Source Voltage (Vgs) :

25V

Turn-Off Delay Time :

250 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

150°C TJ

Vgs (Max) :

±25V

Power Dissipation-Max :

350W Tc

Rds On (Max) @ Id, Vgs :

54m Ω @ 27A, 10V

Base Part Number :

STW55N

Number of Elements :

1

Qualification Status :

Not Qualified

Rise Time :

40ns

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

5800pF @ 50V

Package / Case :

TO-247-3

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

850 mJ

Reach Compliance Code :

Unknown

Power Dissipation :

350W

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

JEDEC-95 Code :

TO-247AC

Fall Time (Typ) :

70 ns

Lead Free :

Lead Free

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

500V

Operating Mode :

ENHANCEMENT MODE

Series :

MDmesh™ II

Continuous Drain Current (ID) :

54A

Current - Continuous Drain (Id) @ 25°C :

54A Tc

Element Configuration :

Single

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Number of Terminations :

3

Resistance :

54mOhm