STW54NM65ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Continuous Drain Current (ID) :

49A

Fall Time (Typ) :

98 ns

Vgs (Max) :

±25V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

188nC @ 10V

Operating Temperature :

150°C TJ

Power Dissipation :

350W

Avalanche Energy Rating (Eas) :

850 mJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation-Max :

350W Tc

Mount :

Through Hole

Pin Count :

3

Packaging :

Tube

Resistance :

65mOhm

Radiation Hardening :

No

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

65m Ω @ 24.5A, 10V

Series :

FDmesh™ II

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

25V

Package / Case :

TO-247-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

6200pF @ 50V

Drain to Source Breakdown Voltage :

650V

JESD-609 Code :

e3

Rise Time :

59ns

Turn-Off Delay Time :

152 ns

Current - Continuous Drain (Id) @ 25°C :

49A Tc

Factory Lead Time :

42 Weeks

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Base Part Number :

STW54N