STW56N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

MDmesh™ M2

Vgs (Max) :

±25V

Gate to Source Voltage (Vgs) :

25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Turn-Off Delay Time :

119 ns

Factory Lead Time :

16 Weeks

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Max Junction Temperature (Tj) :

150°C

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

52A

Mount :

Through Hole

Height :

24.45mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

3750pF @ 100V

Power Dissipation :

350W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

350W Tc

Package / Case :

TO-247-3

Base Part Number :

STW56N

Turn On Delay Time :

18 ns

Width :

5.15mm

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

55m Ω @ 26A, 10V

Length :

15.75mm

Gate Charge (Qg) (Max) @ Vgs :

91nC @ 10V

Number of Pins :

3

Element Configuration :

Single

Drain to Source Breakdown Voltage :

600V

FET Type :

N-Channel

Number of Channels :

1

ECCN Code :

EAR99