STW55NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Pbfree Code :

yes

Number of Elements :

1

Reach Compliance Code :

not_compliant

Number of Pins :

3

Gate to Source Voltage (Vgs) :

25V

RoHS Status :

ROHS3 Compliant

Base Part Number :

STW55N

Pin Count :

3

Series :

MDmesh™ II

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

850 mJ

Pulsed Drain Current-Max (IDM) :

204A

Input Capacitance (Ciss) (Max) @ Vds :

5800pF @ 50V

Fall Time (Typ) :

70 ns

Power Dissipation :

350W

Power Dissipation-Max :

350W Tc

Drain to Source Breakdown Voltage :

600V

Operating Temperature :

150°C TJ

Terminal Finish :

Tin (Sn)

Rise Time :

30ns

Resistance :

60mOhm

Continuous Drain Current (ID) :

51A

Current - Continuous Drain (Id) @ 25°C :

51A Tc

Element Configuration :

Single

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

60m Ω @ 25.5A, 10V

Package / Case :

TO-247-3

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±25V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

JEDEC-95 Code :

TO-247AC

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Packaging :

Tube

Number of Terminations :

3

Turn-Off Delay Time :

225 ns

Mounting Type :

Through Hole

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)