STW50NB20

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

200V

Current Rating :

50A

Power Dissipation :

280W

RoHS Status :

Non-RoHS Compliant

Fall Time (Typ) :

27 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

50A

Lead Free :

Contains Lead

Package / Case :

TO-247-3

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Voltage - Rated DC :

200V

FET Type :

N-Channel

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

115nC @ 10V

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

200A

ECCN Code :

EAR99

Base Part Number :

STW50N

Reach Compliance Code :

not_compliant

Mount :

Through Hole

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

3400pF @ 25V

Drain-source On Resistance-Max :

0.055Ohm

Power Dissipation-Max :

280W Tc

Pbfree Code :

yes

Series :

PowerMESH™

Vgs(th) (Max) @ Id :

5V @ 250μA

Rise Time :

65ns

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

55m Ω @ 25A, 10V

Element Configuration :

Single

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED