STW58N60DM2AG
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- Mfr.Part #
- STW58N60DM2AG
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 50A TO247
- Stock
- 2,579
- In Stock ：
- 2,579
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Continuous Drain Current (ID) :
- 50A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 17 Weeks
- Package / Case :
- TO-247-3
- Input Capacitance (Ciss) (Max) @ Vds :
- 4100pF @ 100V
- Vgs (Max) :
- ±25V
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- ECCN Code :
- EAR99
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 360W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 90nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- STW58N
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 25A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- Automotive, AEC-Q101, MDmesh™ DM2
- Drain to Source Voltage (Vdss) :
- 600V
- Datasheets
- STW58N60DM2AG
N-Channel Tube 60m Ω @ 25A, 10V ±25V 4100pF @ 100V 90nC @ 10V 600V TO-247-3
This high voltage N-channel power MOSFET is part of a series of MDMesh DM2 fast recovery diodes. With extremely low recovery charge (QRR) and recovery time (TRR) and low RDS (conduction), it is suitable for the most demanding high efficiency converters and is ideal for bridge topologies and ZVS phase shifters.
STW58N60DM2AG Feature:
Designed for automotive applications and AEC-Q101 qualified
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
STW58N60DM2AG Application:
? Switching applications
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