STW57N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

73 ns

Drain to Source Breakdown Voltage :

650V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

5.15mm

Radiation Hardening :

No

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Power Dissipation :

250W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Height :

20.15mm

Power Dissipation-Max :

250W Tc

Turn-Off Delay Time :

12 ns

Base Part Number :

STW57N

Packaging :

Tube

Continuous Drain Current (ID) :

42A

Length :

15.75mm

Number of Pins :

3

Mounting Type :

Through Hole

Package / Case :

TO-247-3

Gate to Source Voltage (Vgs) :

25V

Number of Elements :

1

Series :

MDmesh™ V

ECCN Code :

EAR99

Operating Temperature :

150°C TJ

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Resistance :

63mOhm

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 100V

Fall Time (Typ) :

19 ns

Rise Time :

15ns

FET Type :

N-Channel

Factory Lead Time :

17 Weeks

Vgs (Max) :

±25V

Rds On (Max) @ Id, Vgs :

63m Ω @ 21A, 10V