STW57N65M5-4
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- Mfr.Part #
- STW57N65M5-4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-4
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 42A TO247-4L
- Stock
- 1,051
- In Stock ：
- 1,051
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 8 ns
- Rise Time :
- 9ns
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Packaging :
- Tube
- Turn-Off Delay Time :
- 14 ns
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 650V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- MDmesh™ V
- Vgs (Max) :
- ±25V
- Width :
- 5.1mm
- Gate to Source Voltage (Vgs) :
- 25V
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Package / Case :
- TO-247-4
- Length :
- 15.9mm
- Mounting Type :
- Through Hole
- Height :
- 21.1mm
- Continuous Drain Current (ID) :
- 42A
- Element Configuration :
- Single
- Base Part Number :
- STW57N
- Lead Free :
- Lead Free
- Number of Pins :
- 4
- Rds On (Max) @ Id, Vgs :
- 63m Ω @ 21A, 10V
- Mount :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Power Dissipation-Max :
- 250W Tc
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 100V
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- Factory Lead Time :
- 26 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 79 ns
- Datasheets
- STW57N65M5-4
N-Channel Tube 63m Ω @ 21A, 10V ±25V 4200pF @ 100V 98nC @ 10V TO-247-4
STW57N65M5-4 Overview
A device's maximum input capacitance is 4200pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 42A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=650V, and this device has a drain-to-source breakdown voltage of 650V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 14 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 79 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STW57N65M5-4 Features
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 14 ns
STW57N65M5-4 Applications
There are a lot of STMicroelectronics
STW57N65M5-4 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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