STW56NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Base Part Number :

STW56N

Mounting Type :

Through Hole

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

60m Ω @ 22.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Power Dissipation :

300W

Vgs(th) (Max) @ Id :

4V @ 250µA

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

25V

Power Dissipation-Max :

300W Tc

Input Capacitance (Ciss) (Max) @ Vds :

4800pF @ 50V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Mount :

Through Hole

Package / Case :

TO-247-3

Transistor Application :

SWITCHING

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Vgs (Max) :

±25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.06Ohm

Series :

MDmesh™ II

JESD-30 Code :

R-PSFM-T3

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

45A

Drain to Source Breakdown Voltage :

600V