STW56N65M2-4
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- Mfr.Part #
- STW56N65M2-4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-4
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 49A TO247-4L
- Stock
- 12,706
- In Stock ：
- 12,706
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Length :
- 15.9mm
- Width :
- 5.1mm
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 19 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 93nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 62m Ω @ 24.5A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 49A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 3900pF @ 100V
- Power Dissipation-Max :
- 358W Tc
- Drain to Source Voltage (Vdss) :
- 650V
- Package / Case :
- TO-247-4
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Series :
- MDmesh™ M2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Number of Pins :
- 4
- Height :
- 21.1mm
- Continuous Drain Current (ID) :
- 49A
- Vgs (Max) :
- ±25V
- Factory Lead Time :
- 26 Weeks
- Turn-Off Delay Time :
- 146 ns
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Base Part Number :
- STW56N
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- STW56N65M2-4
N-Channel Tube 62m Ω @ 24.5A, 10V ±25V 3900pF @ 100V 93nC @ 10V 650V TO-247-4
STW56N65M2-4 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3900pF @ 100V.This device conducts a continuous drain current (ID) of 49A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 146 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 19 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.This transistor requires a drain-source voltage (Vdss) of 650V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STW56N65M2-4 Features
a continuous drain current (ID) of 49A
the turn-off delay time is 146 ns
a 650V drain to source voltage (Vdss)
STW56N65M2-4 Applications
There are a lot of STMicroelectronics
STW56N65M2-4 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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