STU16N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

25V

Pulsed Drain Current-Max (IDM) :

48A

Rds On (Max) @ Id, Vgs :

299m Ω @ 6A, 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn On Delay Time :

25 ns

Pbfree Code :

yes

Element Configuration :

Single

Fall Time (Typ) :

7 ns

Power Dissipation :

90W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Part Number :

STU16N

Height :

6.2mm

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 100V

Series :

MDmesh™ V

Operating Temperature :

150°C TJ

Rise Time :

9ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Vgs (Max) :

±25V

Turn-Off Delay Time :

30 ns

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Width :

2.4mm

Avalanche Energy Rating (Eas) :

200 mJ

Number of Pins :

3

Drain to Source Breakdown Voltage :

650V

Number of Terminations :

3

Drain-source On Resistance-Max :

0.279Ohm

Mounting Type :

Through Hole

Terminal Finish :

Matte Tin (Sn) - annealed

Current - Continuous Drain (Id) @ 25°C :

12A Tc

FET Type :

N-Channel

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Mount :

Through Hole

Continuous Drain Current (ID) :

12A

Length :

6.6mm

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Additional Feature :

ULTRA-LOW RESISTANCE

ECCN Code :

EAR99

Threshold Voltage :

4V

Radiation Hardening :

No

Packaging :

Tube

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Power Dissipation-Max :

90W Tc

Transistor Application :

SWITCHING