STU10NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Length :

6.6mm

Vgs (Max) :

±25V

Drain-source On Resistance-Max :

0.55Ohm

Continuous Drain Current (ID) :

10A

Power Dissipation-Max :

70W Tc

Fall Time (Typ) :

15 ns

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

3V

Time@Peak Reflow Temperature-Max (s) :

30

Width :

2.4mm

Transistor Element Material :

SILICON

Pin Count :

3

DS Breakdown Voltage-Min :

600V

Drain to Source Voltage (Vdss) :

600V

Avalanche Energy Rating (Eas) :

200 mJ

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

70W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 50V

Factory Lead Time :

26 Weeks

Number of Terminations :

3

Radiation Hardening :

No

Transistor Application :

SWITCHING

Number of Pins :

3

Terminal Finish :

Matte Tin (Sn) - annealed

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Gate to Source Voltage (Vgs) :

25V

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Drain Current-Max (Abs) (ID) :

8A

Packaging :

Tube

Turn On Delay Time :

10 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

MDmesh™ II

Rds On (Max) @ Id, Vgs :

550m Ω @ 4A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Rise Time :

12ns

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Mount :

Through Hole

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Height :

6.9mm

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

32 ns

Mounting Type :

Through Hole

Base Part Number :

STU10N

ECCN Code :

EAR99

REACH SVHC :

No SVHC