STU12N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

15.6 ns

Packaging :

Tube

Turn On Delay Time :

22.6 ns

Pbfree Code :

yes

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Terminal Finish :

Matte Tin (Sn) - annealed

Power Dissipation-Max :

70W Tc

Vgs (Max) :

±25V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Resistance :

430mOhm

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Height :

2.4mm

Lead Free :

Lead Free

Series :

MDmesh™ V

Current - Continuous Drain (Id) @ 25°C :

8.5A Tc

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Transistor Application :

SWITCHING

Power Dissipation :

70W

Gate to Source Voltage (Vgs) :

25V

Threshold Voltage :

4V

Mount :

Through Hole

Drain to Source Breakdown Voltage :

650V

Length :

6.6mm

Width :

6.2mm

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Element Configuration :

Single

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Continuous Drain Current (ID) :

8.5A

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

430m Ω @ 4.3A, 10V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 100V

Number of Elements :

1

Radiation Hardening :

No

Fall Time (Typ) :

15.6 ns

Rise Time :

17.6ns

Base Part Number :

STU12N