STU10P6F6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Packaging :

Tube

Rise Time :

5.3ns

Power Dissipation :

35W

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 10V

Vgs (Max) :

±20V

Turn-Off Delay Time :

14 ns

Gate to Source Voltage (Vgs) :

20V

Base Part Number :

STU10P

Moisture Sensitivity Level (MSL) :

Not Applicable

Number of Elements :

1

Number of Terminations :

3

Radiation Hardening :

No

Number of Pins :

3

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

60V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

10A

Fall Time (Typ) :

3.7 ns

Rds On (Max) @ Id, Vgs :

160m Ω @ 5A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Avalanche Energy Rating (Eas) :

80 mJ

Series :

DeepGATE™, STripFET™ VI

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 48V

Power Dissipation-Max :

35W Tc

Element Configuration :

Single

Case Connection :

DRAIN

FET Type :

P-Channel

Lead Free :

Lead Free

Operating Temperature :

175°C TJ

Turn On Delay Time :

64 ns

Pulsed Drain Current-Max (IDM) :

40A

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Mount :

Through Hole