STU150N3LLH6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 4.5V

FET Type :

N-Channel

Number of Terminations :

3

Transistor Element Material :

SILICON

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

525 mJ

Packaging :

Tube

Case Connection :

DRAIN

Operating Temperature :

175°C TJ

Rise Time :

18ns

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 40A, 10V

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

110W

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0049Ohm

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

80A

Fall Time (Typ) :

46 ns

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

4040pF @ 25V

Length :

6.6mm

Element Configuration :

Single

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Number of Elements :

1

Base Part Number :

STU150

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

30V

ECCN Code :

EAR99

Pin Count :

3

Series :

DeepGATE™, STripFET™ VI

Height :

6.9mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

17 ns

Turn-Off Delay Time :

75 ns

Power Dissipation-Max :

110W Tc

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

1V

Width :

2.4mm

Mount :

Through Hole