STU11N65M2
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- Mfr.Part #
- STU11N65M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 7A IPAK
- Stock
- 11,877
- In Stock ：
- 11,877
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Channels :
- 1
- Turn On Delay Time :
- 8.5 ns
- Resistance :
- 600mOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 12.5nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Rise Time :
- 7.5ns
- Series :
- MDmesh™ II Plus
- Base Part Number :
- STU11N
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Factory Lead Time :
- 26 Weeks
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 650V
- Continuous Drain Current (ID) :
- 7A
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 15 ns
- Gate to Source Voltage (Vgs) :
- 25V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 410pF @ 100V
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 26 ns
- Mounting Type :
- Through Hole
- Threshold Voltage :
- 3V
- Power Dissipation-Max :
- 85W Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Packaging :
- Tube
- Vgs (Max) :
- ±25V
- Rds On (Max) @ Id, Vgs :
- 670m Ω @ 3.5A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Weight :
- 3.949996g
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheets
- STU11N65M2
N-Channel Tube 670m Ω @ 3.5A, 10V ±25V 410pF @ 100V 12.5nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
STU11N65M2 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 410pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 7A.With a drain-source breakdown voltage of 650V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 650V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 26 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8.5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.3V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.
STU11N65M2 Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 26 ns
a threshold voltage of 3V
STU11N65M2 Applications
There are a lot of STMicroelectronics
STU11N65M2 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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