STU13N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Input Capacitance (Ciss) (Max) @ Vds :

580pF @ 100V

Vgs (Max) :

±25V

Height :

6.2mm

Number of Pins :

3

Length :

6.6mm

Drain to Source Voltage (Vdss) :

600V

Drain to Source Breakdown Voltage :

650V

Fall Time (Typ) :

9.5 ns

Series :

MDmesh™ II Plus

Turn-Off Delay Time :

41 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

11A

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Gate to Source Voltage (Vgs) :

25V

FET Type :

N-Channel

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Power Dissipation :

110W

Factory Lead Time :

26 Weeks

Rise Time :

10ns

Number of Elements :

1

Base Part Number :

STU13N

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Turn On Delay Time :

11 ns

Width :

2.4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Power Dissipation-Max :

110W Tc

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.5A, 10V