STP6NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Turn-Off Delay Time :

40 ns

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

920m Ω @ 2.3A, 10V

Avalanche Energy Rating (Eas) :

65 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Resistance :

920mOhm

Drain to Source Breakdown Voltage :

600V

Fall Time (Typ) :

9 ns

Mount :

Through Hole

JESD-609 Code :

e3

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

420pF @ 50V

Mounting Type :

Through Hole

Vgs (Max) :

±25V

Current - Continuous Drain (Id) @ 25°C :

4.6A Tc

Power Dissipation :

45W

Radiation Hardening :

No

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Rise Time :

8ns

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

4.6A

Base Part Number :

STP6N

Series :

MDmesh™ II

Power Dissipation-Max :

45W Tc

Gate to Source Voltage (Vgs) :

25V

Number of Elements :

1

Packaging :

Tube