STP60NF06L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V 5V

Rds On (Max) @ Id, Vgs :

14m Ω @ 30A, 10V

REACH SVHC :

No SVHC

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

15V

Series :

STripFET™ II

JESD-609 Code :

e3

Radiation Hardening :

No

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Pulsed Drain Current-Max (IDM) :

240A

Weight :

9.071847g

Drain to Source Breakdown Voltage :

60V

Pin Count :

3

Height :

9.15mm

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Package / Case :

TO-220-3

Voltage - Rated DC :

60V

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 25V

Turn-Off Delay Time :

55 ns

Continuous Drain Current (ID) :

60A

Transistor Element Material :

SILICON

Length :

10.4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.6mm

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Additional Feature :

LOW THRESHOLD, AVALANCHE RATED

Packaging :

Tube

Vgs (Max) :

±15V

Turn On Delay Time :

35 ns

Transistor Application :

SWITCHING

Fall Time (Typ) :

30 ns

Mount :

Through Hole

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Pins :

3

Number of Terminations :

3

Threshold Voltage :

1V

Power Dissipation-Max :

110W Tc

Current Rating :

60A

Operating Temperature :

-65°C~175°C TJ

Power Dissipation :

110W

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 4.5V

Rise Time :

220ns

Base Part Number :

STP60N

Element Configuration :

Single

Mounting Type :

Through Hole

Resistance :

14mOhm

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks