STP60NF06
- Mfr.Part #
- STP60NF06
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 60A TO220AB
- Stock
- 1,030
- In Stock :
- 1,030
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 12 Weeks
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~175°C TJ
- Turn On Delay Time :
- 15 ns
- Continuous Drain Current (ID) :
- 60A
- Fall Time (Typ) :
- 20 ns
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 60V
- FET Type :
- N-Channel
- JEDEC-95 Code :
- TO-220AB
- Pulsed Drain Current-Max (IDM) :
- 240A
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 110W Tc
- Number of Pins :
- 3
- Number of Channels :
- 1
- Packaging :
- Tube
- Length :
- 10.4mm
- Current Rating :
- 60A
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Turn-Off Delay Time :
- 45 ns
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 30A, 10V
- Series :
- STripFET™ II
- Gate to Source Voltage (Vgs) :
- 20V
- Threshold Voltage :
- 4V
- Gate Charge (Qg) (Max) @ Vgs :
- 73nC @ 10V
- JESD-609 Code :
- e3
- Base Part Number :
- STP60N
- Package / Case :
- TO-220-3
- Drain to Source Breakdown Voltage :
- 60V
- Power Dissipation :
- 110W
- Height :
- 19.68mm
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Width :
- 4.6mm
- Manufacturer Package Identifier :
- TO-220-POA
- Max Junction Temperature (Tj) :
- 175°C
- ECCN Code :
- EAR99
- Terminal Finish :
- Matte Tin (Sn)
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1660pF @ 25V
- Dual Supply Voltage :
- 60V
- Resistance :
- 16mOhm
- Pin Count :
- 3
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Rise Time :
- 108ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- STP60NF06

N-Channel Tube 16m Ω @ 30A, 10V ±20V 1660pF @ 25V 73nC @ 10V TO-220-3
STP60NF06 Description
This Power MOSFET series, which was created using STMicroelectronics' unique S Trip FET technology, was created with the goal of reducing input capacitance and gate charge. As a result, it can be used as the primary switch in sophisticated high-efficiency isolated DC-DC converters for telecommunications and computer applications. It's also suitable for any application requiring a low gate charge drive. STP60NF06 has a maximum power dissipation of 110W and an operating temperature of -55°C175°C TJ. STP60NF06 features three pins and is packaged in TO-220-3 format.
STP60NF06 Features
-
Exceptional dv/dt capability
-
100% avalanche tested
-
Application-oriented characterization
STP60NF06 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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