STP62NS04Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.4mm

Continuous Drain Current (ID) :

62A

JESD-609 Code :

e3

Vgs (Max) :

Clamped

Mount :

Through Hole

Lead Free :

Lead Free

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

62A Tc

Power Dissipation :

110W

Package / Case :

TO-220-3

Series :

MESH OVERLAY™

Avalanche Energy Rating (Eas) :

500 mJ

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Current Rating :

62A

Mounting Type :

Through Hole

Pin Count :

3

Number of Pins :

3

Resistance :

15mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

15m Ω @ 30A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1330pF @ 25V

Threshold Voltage :

4V

Element Configuration :

Single

Fall Time (Typ) :

42 ns

Base Part Number :

STP62N

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

248A

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Power Dissipation-Max :

110W Tc

Gate to Source Voltage (Vgs) :

18V

FET Type :

N-Channel

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

33V

Turn On Delay Time :

13 ns

Manufacturer Package Identifier :

0015988_Rev_R

Radiation Hardening :

No

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Turn-Off Delay Time :

41 ns

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

40A

Rise Time :

104ns

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Packaging :

Tube

Width :

4.6mm

Height :

15.75mm

JEDEC-95 Code :

TO-220AB