STP60N3LH5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

30V

Fall Time (Typ) :

4.2 ns

Power Dissipation :

60W

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Gate to Source Voltage (Vgs) :

22V

Base Part Number :

STP60N

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

ULTRA-LOW RESISTANCE

Package / Case :

TO-220-3

Rise Time :

33ns

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 25V

RoHS Status :

ROHS3 Compliant

Series :

STripFET™ V

Turn-Off Delay Time :

19 ns

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

Number of Terminations :

3

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Number of Elements :

1

Continuous Drain Current (ID) :

48A

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

8.8nC @ 5V

Radiation Hardening :

No

Pin Count :

3

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Power Dissipation-Max :

60W Tc

Resistance :

8.4mOhm

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 24A, 10V

Vgs (Max) :

±20V

FET Type :

N-Channel

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

3V @ 250µA

Packaging :

Tube

Terminal Finish :

Matte Tin (Sn)

Case Connection :

DRAIN

Turn On Delay Time :

6 ns

ECCN Code :

EAR99