STP65NF06
- Mfr.Part #
- STP65NF06
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 60A TO220AB
- Stock
- 189
- In Stock :
- 189
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- not_compliant
- Drain to Source Voltage (Vdss) :
- 60V
- DS Breakdown Voltage-Min :
- 60V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Avalanche Energy Rating (Eas) :
- 390 mJ
- Factory Lead Time :
- 12 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 75nC @ 10V
- Case Connection :
- DRAIN
- Drain Current-Max (Abs) (ID) :
- 60A
- Power Dissipation-Max :
- 110W Tc
- Transistor Application :
- SWITCHING
- Base Part Number :
- STP65N
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 30A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-220-3
- ECCN Code :
- EAR99
- Series :
- STripFET™ II
- JESD-30 Code :
- R-PSFM-T3
- Drain-source On Resistance-Max :
- 0.014Ohm
- Pin Count :
- 3
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 240A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 1700pF @ 25V
- JEDEC-95 Code :
- TO-220AB
- Operating Temperature :
- -55°C~175°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Type :
- N-Channel
- Terminal Finish :
- Tin (Sn)
- Datasheets
- STP65NF06

N-Channel Tube 14m Ω @ 30A, 10V ±20V 1700pF @ 25V 75nC @ 10V 60V TO-220-3
STP65NF06 Description
This power MOSFET STP65NF06 is the latest development of the unique "single feature size" strip process of STMicroelectronics. The resulting transistor has extremely high packing density, low on-resistance, strong avalanche features and less critical alignment steps, so it has significant manufacturing repeatability.
STP65NF06 Features
Standard level gate drive
■ 100% avalanche tested
STP65NF06 Applications
■ Switching application
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