STP65NF06

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

not_compliant

Drain to Source Voltage (Vdss) :

60V

DS Breakdown Voltage-Min :

60V

Transistor Element Material :

SILICON

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

390 mJ

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

60A

Power Dissipation-Max :

110W Tc

Transistor Application :

SWITCHING

Base Part Number :

STP65N

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

60A Tc

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

14m Ω @ 30A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-220-3

ECCN Code :

EAR99

Series :

STripFET™ II

JESD-30 Code :

R-PSFM-T3

Drain-source On Resistance-Max :

0.014Ohm

Pin Count :

3

Packaging :

Tube

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

240A

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)