STP6NK70Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

930pF @ 25V

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Power Dissipation-Max :

110W Tc

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

5A

Drain to Source Breakdown Voltage :

700V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

FET Type :

N-Channel

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

5A Tc

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Turn-Off Delay Time :

45 ns

Qualification Status :

Not Qualified

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSFM-T3

Power Dissipation :

110W

Avalanche Energy Rating (Eas) :

200 mJ

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

1.8 Ω @ 2.5A, 10V

Element Configuration :

Single

Series :

SuperMESH™

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Base Part Number :

STP6N

Pulsed Drain Current-Max (IDM) :

20A

Number of Elements :

1

Voltage - Rated DC :

700V

Current Rating :

5A

Continuous Drain Current (ID) :

5A

Gate to Source Voltage (Vgs) :

30V

Rise Time :

18ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Fall Time (Typ) :

30 ns