STP6NB90

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

5.8A Tc

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Transistor Application :

SWITCHING

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Series :

PowerMESH™

Terminal Finish :

Tin/Lead (Sn/Pb)

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

250 mJ

Vgs (Max) :

±30V

Power Dissipation :

135W

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation-Max :

135W Tc

Rds On (Max) @ Id, Vgs :

2 Ω @ 3A, 10V

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

ECCN Code :

EAR99

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Voltage - Rated DC :

900V

JESD-609 Code :

e0

Pulsed Drain Current-Max (IDM) :

23A

Element Configuration :

Single

Drain to Source Breakdown Voltage :

900V

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

5.8A

Rise Time :

10ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

2Ohm

Turn On Delay Time :

20 ns

Fall Time (Typ) :

15 ns

FET Type :

N-Channel

Additional Feature :

High Voltage

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Number of Elements :

1

Current Rating :

5.8A

Packaging :

Tube

Base Part Number :

STP6N