STP6N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

4.5A

Number of Terminations :

3

Vgs (Max) :

30V

DS Breakdown Voltage-Min :

800V

Input Capacitance (Ciss) (Max) @ Vds :

255pF @ 100V

FET Type :

N-Channel

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Factory Lead Time :

17 Weeks

Base Part Number :

STP6N

Avalanche Energy Rating (Eas) :

85 mJ

Number of Elements :

1

Lead Free :

Lead Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

SuperMESH5™

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

85W Tc

JEDEC-95 Code :

TO-220AB

Terminal Position :

Single

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

18A

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 2A, 10V

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

800V

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

5V @ 100µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mounting Type :

Through Hole