STP6N65M2
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- Mfr.Part #
- STP6N65M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 4A TO220
- Stock
- 1,665
- In Stock ：
- 1,665
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 60W Tc
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 25V
- Turn On Delay Time :
- 19 ns
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- Rise Time :
- 7ns
- Base Part Number :
- STP6N
- Continuous Drain Current (ID) :
- 4A
- REACH SVHC :
- No SVHC
- Fall Time (Typ) :
- 20 ns
- Factory Lead Time :
- 16 Weeks
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Number of Channels :
- 1
- Vgs (Max) :
- ±25V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 9.8nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- ECCN Code :
- EAR99
- Weight :
- 329.988449mg
- Rds On (Max) @ Id, Vgs :
- 1.35 Ω @ 2A, 10V
- Drain to Source Breakdown Voltage :
- 650V
- Series :
- MDmesh™
- Packaging :
- Tube
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 226pF @ 100V
- Threshold Voltage :
- 3V
- Turn-Off Delay Time :
- 6.5 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- STP6N65M2
N-Channel Tube 1.35 Ω @ 2A, 10V ±25V 226pF @ 100V 9.8nC @ 10V TO-220-3
STP6N65M2 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 226pF @ 100V.This device conducts a continuous drain current (ID) of 4A, which is the maximum continuous current transistor can conduct.Using VGS=650V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 650V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 6.5 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 19 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STP6N65M2 Features
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 6.5 ns
a threshold voltage of 3V
STP6N65M2 Applications
There are a lot of STMicroelectronics
STP6N65M2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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