STP6N62K3
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- Mfr.Part #
- STP6N62K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 620V 5.5A TO220AB
- Stock
- 2,998
- In Stock ：
- 2,998
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 22 ns
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Factory Lead Time :
- 12 Weeks
- Additional Feature :
- ULTRA LOW-ON RESISTANCE
- Packaging :
- Tube
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 90W Tc
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Mount :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 22A
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Tc
- Power Dissipation :
- 90W
- Drain to Source Breakdown Voltage :
- 620V
- Height :
- 15.75mm
- Package / Case :
- TO-220-3
- Resistance :
- 1.2Ohm
- Continuous Drain Current (ID) :
- 5.5A
- JEDEC-95 Code :
- TO-220AB
- Number of Pins :
- 3
- Base Part Number :
- STP6N
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 19 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Rise Time :
- 12.5ns
- Series :
- SuperMESH3™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.4mm
- Width :
- 4.6mm
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Threshold Voltage :
- 3.75V
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 2.8A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 875pF @ 50V
- Gate to Source Voltage (Vgs) :
- 30V
- Turn-Off Delay Time :
- 49 ns
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±30V
- Operating Temperature :
- 150°C TJ
- Datasheets
- STP6N62K3
N-Channel Tube 1.2 Ω @ 2.8A, 10V ±30V 875pF @ 50V 34nC @ 10V TO-220-3
STP6N62K3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 875pF @ 50V.This device conducts a continuous drain current (ID) of 5.5A, which is the maximum continuous current transistor can conduct.Using VGS=620V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 620V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 49 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 22A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 22 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3.75V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STP6N62K3 Features
a continuous drain current (ID) of 5.5A
a drain-to-source breakdown voltage of 620V voltage
the turn-off delay time is 49 ns
based on its rated peak drain current 22A.
a threshold voltage of 3.75V
STP6N62K3 Applications
There are a lot of STMicroelectronics
STP6N62K3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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